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| PD - 9.543C IRFPG50 HEXFET(R) Power MOSFET www.irf.com 1 10/29/97 IRFPG50 2 www.irf.com IRFPG50 www.irf.com 3 IRFPG50 100 OPERATION IN THIS AREA LIMITED BY RDS(on) 10us I D , Drain Current (A) 10 100us 1ms 1 10ms 0.1 TC = 25 C TJ = 150 C Single Pulse 10 100 1000 10000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFPG50 www.irf.com 5 IRFPG50 6 www.irf.com IRFPG50 Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG * * * * dv/dt controlled by R G Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRFPG50 TO-247AC Package Details 1 5 .90 (.6 2 6) 1 5 .30 (.6 0 2) -B3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 0 .25 (.0 1 0) M -A5 .5 0 (.2 1 7 ) 2 0 .3 0 (.80 0 ) 1 9 .7 0 (.77 5 ) 1 2 3 -C 1 4.8 0 (.5 8 3 ) 1 4.2 0 (.5 5 9 ) 4 .3 0 (.1 7 0 ) 3 .7 0 (.1 4 5 ) LEAD AS SIGN MENT S 1 2 3 4 G ATE DRAIN SO URCE DRAIN -DDBM 5 .3 0 (.2 0 9 ) 4 .7 0 (.1 8 5 ) 2 .5 0 (.0 8 9) 1 .5 0 (.0 5 9) 4 2X 5. 50 (.2 17 ) 4. 50 (.1 77 ) NOT ES : 1 DIME NSIO NING & TO LERAN CING PE R AN SI Y 14.5M, 1982. 2 CO NTRO LLING DIMENS IO N : IN CH . 3 CO NF ORM S T O JEDE C O UTLINE T O-247-A C. 2 .4 0 (.09 4 ) 2 .0 0 (.07 9 ) 2X 5 .45 (.2 1 5) 2X 1 .4 0 (.0 56 ) 3 X 1 .0 0 (.0 39 ) 0 .25 (.0 10 ) M 3 .4 0 (.1 3 3 ) 3 .0 0 (.1 1 8 ) C AS 0 .8 0 (. 03 1 ) 3 X 0 .4 0 (. 01 6 ) 2.6 0 (.10 2 ) 2.2 0 (.08 7 ) Part Marking E XAM P LE : T H IS IS A N IR FP E3 0 W IT H AS SE MB L Y L O T C O D E 3 A1 Q A IN TER N AT IO N AL R EC T IF IER LOGO A S SEM B L Y LOT COD E P AR T N U M B ER IR F PE 3 0 3 A1 Q 9 3 0 2 D A TE C O D E (Y YW W ) YY = YE A R W W W EE K WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T 3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: 171 (K&H Bldg.) 30-4 Nishi-ikebukuro 3-chome, Toshima-ku, Tokyo Japan Tel: 81 33 983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 16907 Tel: 65 221 8371 Data and specifications subject to change without notice. 10/97 8 www.irf.com |
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